Cross gain modulation in broad area vertical cavity semiconductor amplifier

Marino F., Furfaro L., Balle S.
Applied Physics Letters 86, 151116 (1-3) (2005)

We demonstrate that broad-area vertical-cavity semiconductor optical amplifiers allow for wavelength conversion at 2.5 Gb/ s via cross-gain modulation sXGMd. XGM is reached with a saturation beam of only 1.5 mW over an optical bandwidth of 0.7 nm s215 GHzd. Depending on the wavelengths of the injected fields, inverted or noninverted output can be obtained.


Esta web utiliza cookies para la recolección de datos con un propósito estadístico. Si continúas navegando, significa que aceptas la instalación de las cookies.


Más información De acuerdo