Cross gain modulation in broad area vertical cavity semiconductor amplifier
Marino F., Furfaro L., Balle S.
Applied Physics Letters 86, 151116 (1-3) (2005)
Applied Physics Letters 86, 151116 (1-3) (2005)
We demonstrate that broad-area vertical-cavity semiconductor optical amplifiers allow for wavelength conversion at 2.5 Gb/ s via cross-gain modulation sXGMd. XGM is reached with a saturation beam of only 1.5 mW over an optical bandwidth of 0.7 nm s215 GHzd. Depending on the wavelengths of the injected fields, inverted or noninverted output can be obtained.
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