Analytical approximation for the quantum-well gain and refractive-index spectra of vertical-cavity surface-emitting lasers including the effect of uniaxial planar stress
van der Sande, G.; Danckaert, J.;Veretennicoff, I.;Panajotov, K.; Balle, S.
Physical Review A 71, 063801 (1-12) (2005)
Physical Review A 71, 063801 (1-12) (2005)
Starting from a microscopic model in the free-carrier approximation, we derive an analytical approximation for the optical susceptibility of uniaxially stressed quantum-well lasers at low temperatures by neglecting second-order contributions of the band-mixing phenomenon. The resulting polarization-dependent peak gains, differential peak gains, transparency carrier densities, and linewidth enhancement factors as induced by the uniaxial planar stress are discussed.
Related research projects
LACAVER
Láseres y amplificadores de cavidad vertical para comunicaciones ópticas y procesado óptico de señal
P.I.: Salvador Bal.le
Los láseres de semiconductor de cavidad vertical yemisión superficial (VCSEL) han pasado en pocos años de una propuesta teórica a un componente ampliamente utilizado en Comunicaciones Ópticas. En la actualidad sus principales …
VISTA
VCSELs for Information Society Technology Applications
P.I.: Maxi San Miguel
The main objectives of the project are the understanding of the underlying physical mechanisms relevant to Vertical Cavity Surface Emitting Lasers operation, the subsequent improvement of their efficiency and the transfer of …