Analytical approximation for the quantum-well gain and refractive-index spectra of vertical-cavity surface-emitting lasers including the effect of uniaxial planar stress

Starting from a microscopic model in the free-carrier approximation, we derive an analytical approximation for the optical susceptibility of uniaxially stressed quantum-well lasers at low temperatures by neglecting second-order contributions of the band-mixing phenomenon. The resulting polarization-dependent peak gains, differential peak gains, transparency carrier densities, and linewidth enhancement factors as induced by the uniaxial planar stress are discussed.