Hole recapture limited single photon generation from a single n-type charge-tunable quantum dot

Dalgarno, PA ; McFarlane, J; Brunner, D; Lambert, RW; Gerardot, BD; Warburton, RJ; Karrai, K; Badolato, A; Petroff, PM
Applied Physics Letters 92, 193103 (1-3) (2008)

The complete control of the electron occupation of a single InGaAs dot is shown to produce highly antibunched single photon emission with nonresonant optical excitation. Intensity correlation measurements show g(2)(0) values of 3% (50%) at low (high) excitation power. A distinct double peak structure is shown at time zero, demonstrating that although two photons may be emitted per excitation pulse, they are not simultaneously emitted. We interpret this feature as a hole recapture process from the wetting layer into the dot after initial recombination. The recapture dynamics is shown to be adjustable through engineering the valence potential.

Aquesta web utilitza cookies per a la recollida de dades amb un propòsit estadístic. Si continues navegant, vol dir que acceptes la instal·lació de la cookie.

Més informació D'accord