The efficient way to increase the emitted power by VCSEL is to combine several emitters into phase-locked array. There is a strong motivation to develop a design of the VCSEL arrays that will emit narrow linewidth. One can observe two types of modes in VCSEL arrays. First kind are modes of single emitters, second are the array supermodes formed of the same order of single-emitter modes. The key to narrow the width of emission spectrum is to reduce the number of existing modes down to only one. First kind of modes are known to be governed mainly by the dimension of the single emitter and patterning of optical confinement. The type and number of design parameters that control the second kind of the modes are known much less. During the seminar the simulation results of optimization of carrier injection, heat flow and optical confinement aimed for single mode operation will be presented. The analyzed structures of 1.3 μm VCSEL arrays incorporate InAlGaAs quantum wells within InP cavity. The cavity is bounded by AlGaAs/GaAs DBRs. The tunnel junction is responsible for carrier funneling into the active region. There will be investigated three types of the optical confinement: Type1 no intentional optical pattern but thermal focusing Type2 air-gaps etched at the interface between top DBR and cavity Type3 anti-resonant reflecting optical waveguide (ARROW) at the interface between top DBR and cavity To rigorously simulate the physical phenomena taking place in the device multi-physical model, which comprises in the selfconsistent manner three-dimensional models of optical (Plane Wave Admittance Method), thermal, electrical and diffusion (Finite Element Method) phenomena is used. The analysis shows that mode discrimination is very responsive to the injected current in laterally patterned TJ, the air-gap patterning reduces influence of the working conditions and supports multimode operation, and finally, antiguiding schemes provide single-mode operation for prescribed geometrical design.
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