Quantum dots based on spin properties of semiconductor heterostructures

The possibility of a type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states having peculiar spin properties.
Furthermore, from mean field calculations (local-spin-density and Hartree-Fock)we find that even two electrons could form a bound state
in these dots.